3KASMC10 thru 3kasmc43a www.vishay.com vishay general semiconductor revision: 14-dec-12 1 document number: 88480 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount par ? transient voltage suppressors high temperature stability and high reliabi lity conditions features ? junction passivation optimized design passivated anisotropic rectifier technology ?t j = 185 c capability suitable for high reliability and automotive requirement ? available in uni-directional polarity only ? 3000 w peak pulse power capability with a 10/1000 s waveform ? excellent clamping capability ? very fast response time ? low incremental surge resistance ? meets msl level 1, per j-st d-020, lf maximum peak of 260 c ? aec-q101 qualified ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ics, mosfet, signal lines of sensor units for consumer, computer, industrial, automo tive, and telecommunication. mechanical data case: do-214ab (smc) molding compound meets ul 94 v-0 flammability rating base p/nhe3 - rohs-compliant and aec-q101 qualified base p/nhe3_x - rohs-comp liant and aec-q101 qualified (_x denotes revision code e.g. a, b, .....) terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 he3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes cathode end notes (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25 c per fig. 2. (2) measured on 8.3 ms single half sine-wave, or eq uivalent square wave, duty cycl e = 4 pulses per minute maximum primary characteristics v wm 10 v to 43 v v br 11.1 v to 52.8 v p ppm 3000 w p d 6.0 w i fsm 200 a t j max. 185 c polarity uni-directional package do-214ab (smc) do-214ab (smc) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol value unit peak pulse power di ssipation with a 10/1000 s waveform (1) (fig. 3) p ppm 3000 w peak power pulse current with a 10/1000 s waveform (1) (fig. 1) i ppm see next table a peak forward surge current 8. 3 ms single ha lf sine-wave (2) i fsm 200 a power dissipation on infinite heatsink, t l = 75 c (fig. 6) p d 6.0 w maximum instantaneous forward voltage at 100 a (2) v f 3.5 v operating junction and storage temperature range t j , t stg - 65 to + 185 c
3KASMC10 thru 3kasmc43a www.vishay.com vishay general semiconductor revision: 14-dec-12 2 document number: 88480 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: t p ? 50 ms (2) surge current waveform per fi g. 3 and derate per fig. 2 (3) all terms and symbols are cons istent with ansi/ieee c62.35 electrical characteristics (t a = 25 c unless otherwise noted) device type device marking code breakdown voltage v br at i t (1) (v) test current i t (ma) stand-off voltage v wm (v) maximum reverse leakage at v wm i r (a) maximum reverse leakage at v wm i d (a) t j = 150 c maximum peak pulse surge current i ppm (a) (2) maximum clamping voltage at i ppm v c (v) min. max. 3KASMC10 3aw 11.1 13.6 1.0 10 5.0 50 160 18.8 3KASMC10a 3ax 11.1 12.3 1.0 10 5.0 50 177 17.0 3kasmc11 3ay 12.2 14.9 1.0 11 5.0 50 149 20.1 3kasmc11a 3az 12.2 13.5 1.0 11 5.0 50 165 18.2 3kasmc12 3bd 13.3 16.3 1.0 12 2.0 20 136 22.0 3kasmc12a 3be 13.3 14.7 1.0 12 2.0 20 151 19.9 3kasmc13 3bf 14.4 17.6 1.0 13 2.0 20 126 23.8 3kasmc13a 3bg 14.4 15.9 1.0 13 2.0 20 140 21.5 3kasmc14 3bh 15.6 19.1 1.0 14 1.0 10 116 25.8 3kasmc14a 3bk 15.6 17.2 1.0 14 1.0 10 129 23.2 3kasmc15 3bl 16.7 20.4 1.0 15 1.0 10 112 26.9 3kasmc15a 3bm 16.7 18.5 1.0 15 1.0 10 123 24.4 3kasmc16 3bn 17.8 21.8 1.0 16 1.0 10 104 28.8 3kasmc16a 3bp 17.8 19.7 1.0 16 1.0 10 115 26.0 3kasmc17 3bq 18.9 23.1 1.0 17 1.0 10 98.4 30.5 3kasmc17a 3br 18.9 20.9 1.0 17 1.0 10 109 27.6 3kasmc18 3bs 20.0 24.4 1.0 18 1.0 10 93.2 32.2 3kasmc18a 3bt 20.0 22.1 1.0 18 1.0 10 103 29.2 3kasmc20 3bu 22.2 27.1 1.0 20 1.0 10 83.8 35.8 3kasmc20a 3bv 22.2 24.5 1.0 20 1.0 10 92.6 32.4 3kasmc22 3bw 24.4 29.8 1.0 22 1.0 10 76.1 39.4 3kasmc22a 3bx 24.4 26.9 1.0 22 1.0 10 84.5 35.5 3kasmc24 3by 26.7 32.6 1.0 24 1.0 10 69.8 43.0 3kasmc24a 3bz 26.7 29.5 1.0 24 1.0 10 77.1 38.9 3kasmc26 3cd 28.9 35.3 1.0 26 1.0 10 64.4 46.6 3kasmc26a 3ce 28.9 31.9 1.0 26 1.0 10 71.3 42.1 3kasmc28 3cf 31.1 38.0 1.0 28 1.0 10 60.0 50.0 3kasmc28a 3cg 31.1 34.4 1.0 28 1.0 10 66.1 45.4 3kasmc30 3ch 33.3 40.7 1.0 30 1.0 15 56.1 53.5 3kasmc30a 3ck 33.3 36.8 1.0 30 1.0 15 62.0 48.4 3kasmc33 3cl 36.7 44.9 1.0 33 1.0 15 50.8 59.0 3kasmc33a 3cm 36.7 40.6 1.0 33 1.0 15 56.3 53.3 3kasmc36 3cn 40.0 48.9 1.0 36 1.0 20 46.7 64.3 3kasmc36a 3cp 40.0 44.2 1.0 36 1.0 20 51.6 58.1 3kasmc40 3cq 44.4 54.3 1.0 40 1.0 20 42.0 71.4 3kasmc40a 3cr 44.4 49.1 1.0 40 1.0 20 46.5 64.5 3kasmc43 3cs 47.8 58.4 1.0 43 1.0 20 39.1 76.7 3kasmc43a 3ct 47.8 52.8 1.0 43 1.0 20 43.2 69.4
3KASMC10 thru 3kasmc43a www.vishay.com vishay general semiconductor revision: 14-dec-12 3 document number: 88480 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) mounted on minimum recommended pad layout note (1) aec-q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - peak pulse power rating curve fig. 2 - pulse power or current vs. initial junction temperature fig. 3 - pulse waveform fig. 4 - typical junction capacitance thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol value unit typical thermal resistance, junction to ambient air (1) r ? ja 77.5 c/ w typical thermal resistance, junction to leads r ? jl 18.3 ordering information (example) preferred p/n unit weight (g) preferred pa ckage code base quantity delivery mode 3KASMC10ahe3/57t (1) 0.211 57t 850 7" diameter plastic tape and reel 3KASMC10ahe3/9at (1) 0.211 9at 3500 13" diameter plastic tape and reel 3KASMC10a_a/h (1) 0.211 h 850 7" diameter plastic tape and reel 3KASMC10a_a/i (1) 0.211 i 3500 13" diameter plastic tape and reel 0.1 1 10 100 0.1 1 10 100 1000 10 000 p ppm - peak po w er (k w ) t d - p u lse w idth (s) 0 25 50 75 100 0 50 100 150 200 t j - initial temperat u re (c) peak p u lse p o w er (p pp ) or c u rrent (i pp ) derating in percentage, % 0 50 100 150 t r = 10 s peak val u e i ppm half val u e - i ppm i pp 2 t d 10/1000 s w a v eform as defined b y r.e.a. 0 1.0 2.0 3.0 4.0 t - time (ms) i ppm - peak p u lse c u rrent, % i rsm t j = 25 c p u lse w idth (t d ) is defined as the point w here the peak c u rrent decays to 50 % of i ppm 100 1000 10 000 10 20 30 40 50 c j - j u nction capacitance (pf) v w m - re v erse stand-off voltage (v) t j = 25 c f = 1.0 mhz v sig = 50 mvp-p meas u red at zero bias meas u red at stand-off voltage
3KASMC10 thru 3kasmc43a www.vishay.com vishay general semiconductor revision: 14-dec-12 4 document number: 88480 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum non-repetitive/peak forward surge current fig. 6 - power derating curve package outline dimensions in inches (millimeters) 200 100 nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) 10 50 50 10 1 100 5 t j = t j max. 8.3 ms single half sine- w a v e p d - po w er dissipation ( w ) t l - lead temperat u re (c) 6 5 4 3 2 1 0 0 25 50 75 100 125 150 175 200 60 hz resisti v e or ind u cti v e load cathode band do-214ab ( s mc) 0.126 (3.20) 0.114 (2.90) 0.246 (6.22) 0.220 (5.59) 0.280 (7.11) 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) 0.060 (1.52) 0.030 (0.76) 0.103 (2.62) 0.079 (2.06) mountin g pad layout 0.126 (3.20) min. 0.060 (1.52) min. 0.185 (4.69) max. 0.320 (8.13) ref.
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